Datasheet IRG7PG42UDPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG7PG42UDPBF	INSULATED GATE BIPOLAR TRANSISTOR IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Ultra fast soft recovery co-pak	International Rectifier

IRG7PG42UD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG7PG42UD-EPbF	INSULATED GATE BIPOLAR TRANSISTOR IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Ultra fast s	International Rectifier
IRG7PG42UDPBF	INSULATED GATE BIPOLAR TRANSISTOR IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Ultra fast s	International Rectifier

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