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Datasheet IRG4RC10K Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | IRG4RC10K | INSULATED GATE BIPOLAR TRANSISTO PD 91735A
IRG4RC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard |
International Rectifier |
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3 | IRG4RC10KD | INSULATED GATE BIPOLAR TRANSISTO PD 91736A
IRG4RC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter dist |
International Rectifier |
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2 | IRG4RC10KDPBF | INSULATED GATE BIPOLAR TRANSISTO PD - 95035
IRG4RC10KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribut |
International Rectifier |
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1 | IRG4RC10KPBF | INSULATED GATE BIPOLAR TRANSISTO PD 95389
IRG4RC10KPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standar |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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