파트넘버.co.kr IRG4PH40UD2 데이터시트 검색

IRG4PH40UD2 전자부품 데이터시트



IRG4PH40UD2 전자부품 회로 및
기능 검색 결과



IRG4PH40UD2  

IRF
IRF

IRG4PH40UD2

Insulated Gate Bipolar Transistor

PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter



IRG4PH40UD2-E  

IRF
IRF

IRG4PH40UD2-E

Insulated Gate Bipolar Transistor

PD - 96781 IRG4PH40UD2-E Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HE



IRG4PH40UD2-EP  

IRF
IRF

IRG4PH40UD2-EP

Insulated Gate Bipolar Transistor

PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD



IRG4PH40UD2PBF  

IRF
IRF

IRG4PH40UD2PBF

Insulated Gate Bipolar Transistor

PD - 95570 IRG4PH40UD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parame



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