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Datasheet IRG4PC50F Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | IRG4PC50F | INSULATED GATE BIPOLAR TRANSISTOR PD 91468C
IRG4PC50F
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO |
 IRF |
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| 4 | IRG4PC50F-EPBF | Fast Speed IGBT PD - 96168
IRG4PC50F-EPbF
INSULATED GATE BIPOLAR TRANSISTOR Features
Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard |
 International Rectifier |
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| 3 | IRG4PC50FD | INSULATED GATE BIPOLAR TRANSISTOR PD 91469B
IRG4PC50FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency |
IRF |
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| 2 | IRG4PC50FDPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD -95225
IRG4PC50FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distributio |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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