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Datasheet IRG4PC40U Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRG4PC40U | INSULATED GATE BIPOLAR TRANSISTOR PD 91466E
IRG4PC40U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan |
 IRF |
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| 3 | IRG4PC40UD | INSULATED GATE BIPOLAR TRANSISTOR PD 9.1467D
IRG4PC40UD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficienc |
IRF |
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| 2 | IRG4PC40UDPBF | INSULATED GATE BIPOLAR TRANSISTOR PD - 94937
IRG4PC40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and hi |
 International Rectifier |
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| 1 | IRG4PC40UPBF | INSULATED GATE BIPOLAR TRANSISTOR PD-95184
IRG4PC40UPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry st |
International Rectifier |
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