Datasheet IRG4IBC30KDPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG4IBC30KDPBF	INSULATED GATE BIPOLAR TRANSISTOR PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE(on) Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter distribution and highe	International Rectifier

IRG4IBC30KD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG4IBC30KD	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter dis	International Rectifier
IRG4IBC30KDPBF	INSULATED GATE BIPOLAR TRANSISTOR PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High switching speed optimized for up to 25kHz with low VCE(on) Short Circuit Rating 10µs @ 125°C, VGE = 15V Generation 4 IGBT design provides tighter parameter di	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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