Datasheet IRG4BC40UPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG4BC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR PD - 95428 IRG4BC40UPbF INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry sta	International Rectifier

IRG4BC40U Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG4BC40U	HEXFET Power MOSFET PD - 91456E IRG4BC40U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generati	International Rectifier
IRG4BC40UPBF	INSULATED GATE BIPOLAR TRANSISTOR PD - 95428 IRG4BC40UPbF INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generati	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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