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Datasheet IRG4BC20U Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | IRG4BC20U | Insulated gate bipolar transistor PD - 91448D
IRG4BC20U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry st |
IRF |
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4 | IRG4BC20UD | INSULATED GATE BIPOLAR TRANSISTOR PD-91449C
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distri |
IRF |
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3 | IRG4BC20UD-S | INSULATED GATE BIPOLAR TRANSISTOR PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficienc |
IRF |
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2 | IRG4BC20UD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR PD- 95565A
IRG4BC20UD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distr |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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