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Datasheet IRG4BC20MD Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRG4BC20MD | INSULATED GATE BIPOLAR TRANSISTOR PD -94115
IRG4BC20MD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard TO-220AB package |
 IRF |
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| 3 | IRG4BC20MD-S | INSULATED GATE BIPOLAR TRANSISTOR PD -94116
IRG4BC20MD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry standard D2Pak package
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IRF |
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| 2 | IRG4BC20MD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD -95564
IRG4BC20MD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode • Industry |
 International Rectifier |
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| 1 | IRG4BC20MDPbF | INSULATED GATE BIPOLAR TRANSISTOR PD -94908A
IRG4BC20MDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE Features
• Rugged: 10µsec short circuit capable at VGS=15V • Low VCE(on) for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery
antiparallel diode • Industr |
International Rectifier |
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