Datasheet IRG4BC15MDPBF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRG4BC15MDPBF	INSULATED GATE BIPOLAR TRANSISTOR PD- 95612 IRG4BC15MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes C Short Circuit Rated Fast IGB	International Rectifier

IRG4BC15MD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRG4BC15MD	INSULATED GATE BIPOLAR TRANSISTOR PD- 94151A IRG4BC15MD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel	International Rectifier
IRG4BC15MDPBF	INSULATED GATE BIPOLAR TRANSISTOR PD- 95612 IRG4BC15MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS = 15V • Low VCE(on) for 4 to 10kHz applications • IGBT co-packaged with ultra-soft-recovery anti-parallel diodes C Short Ci	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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