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Datasheet IRG4BC10S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR
PD - 91786A
IRG4BC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications |
 International Rectifier |
 |
| 5 | IRG4BC10SD-L | (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vc |
International Rectifier |
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| 4 | IRG4BC10SD-LPBF | INSULATED GATE BIPOLAR TRANSISTOR
PD - 95780
IRG4BC10SD-SPbF IRG4BC10SD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushl |
International Rectifier |
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| 3 | IRG4BC10SD-S | (IRG4BC10SD-L/-S) INSULATED GATE BIPOLAR TRANSISTOR
PD - 94255
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. • Very Tight Vc |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
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