IRFZ48
Vishay
Power MOSFET ( Transistor )IRFZ48, SiHFZ48
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 36 Single
D
FEATURES
60 0.018
• • • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rate
IRFZ48L
Vishay
Power MOSFET ( Transistor )www.vishay.com
IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
110 29 36 Single
0.018
D
I2PAK (TO-262)
D2PAK (TO-263)
FEATURES
•
IRFZ48N
NXP Semiconductors
N-channel enhancement mode TrenchMOS transistorPhilips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device feature
IRFZ48N
International Rectifier
Power MOSFET ( Transistor )l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r
IRFZ48NL
International Rectifier
(IRFZ48NL / IRFZ48NS) Advanced Process TechnologyPD - 9.1408B
Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
IRFZ48NS IRFZ48NL
VDSS = 55V RDS(on) = 0.
IRFZ48NLPBF
International Rectifier
HEXFET Power MOSFETl l l l l l l
Description
Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
G
IRFZ48NSPbF IRFZ48NLPbF
D
PD - 95125
HEXFET® Power MOSFET VDS
IRFZ48NPBF
International Rectifier
HEXFET Power MOSFET
PD - 94991
IRFZ48NPbF
HEXFET® Power MOSFET
l l l l l l l
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free
D
VDSS = 55V RDS(on) = 14m�
IRFZ48NS
International Rectifier
(IRFZ48NL / IRFZ48NS) Advanced Process TechnologyPD - 9.1408B
Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
HEXFET® Power MOSFET
D
IRFZ48NS IRFZ48NL
VDSS = 55V RDS(on) = 0.