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IRFZ48 전자부품 데이터시트



IRFZ48 전자부품 회로 및
기능 검색 결과



IRFZ48  

Vishay
Vishay

IRFZ48

Power MOSFET ( Transistor )

IRFZ48, SiHFZ48 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 110 29 36 Single D FEATURES 60 0.018 • • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rate



IRFZ48L  

Vishay
Vishay

IRFZ48L

Power MOSFET ( Transistor )

www.vishay.com IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 110 29 36 Single 0.018 D I2PAK (TO-262) D2PAK (TO-263) FEATURES •



IRFZ48N  

NXP Semiconductors
NXP Semiconductors

IRFZ48N

N-channel enhancement mode TrenchMOS transistor

Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device feature



IRFZ48N  

International Rectifier
International Rectifier

IRFZ48N

Power MOSFET ( Transistor )

l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-r



IRFZ48NL  

International Rectifier
International Rectifier

IRFZ48NL

(IRFZ48NL / IRFZ48NS) Advanced Process Technology

PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRFZ48NS IRFZ48NL VDSS = 55V RDS(on) = 0.



IRFZ48NLPBF  

International Rectifier
International Rectifier

IRFZ48NLPBF

HEXFET Power MOSFET

l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFZ48NSPbF IRFZ48NLPbF D PD - 95125 HEXFET® Power MOSFET VDS



IRFZ48NPBF  

International Rectifier
International Rectifier

IRFZ48NPBF

HEXFET Power MOSFET

PD - 94991 IRFZ48NPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS(on) = 14m�



IRFZ48NS  

International Rectifier
International Rectifier

IRFZ48NS

(IRFZ48NL / IRFZ48NS) Advanced Process Technology

PD - 9.1408B Advanced Process Technology Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D IRFZ48NS IRFZ48NL VDSS = 55V RDS(on) = 0.



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