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Datasheet IRFZ46N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRFZ46N | Power MOSFET ( Transistor ) l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated
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Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis |
 International Rectifier |
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| 5 | IRFZ46NL | (IRFZ46NL / IRFZ46NS) HEXFET POWER MOSFET PD - 91305C
Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l
HEXFET® Power MOSFET
D
IRFZ46NS IRFZ46NL
VDSS = 55V RDS(on) = 0.0165Ω
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Advanced HEXFET® Power MOSFE |
International Rectifier |
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| 4 | IRFZ46NLPbF | HEXFET Power MOSFET Advanced Process Technology Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
IRFZ46NSPbF IRFZ46NLPbF
HEXFET® Power MOSFET
D
PD - 95158
VDSS = 55V RDS(on) = 0.0165Ω
G
Advanced HEX |
International Rectifier |
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| 3 | IRFZ46NPbF | Power MOSFETs l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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