파트넘버.co.kr IRFZ46L 데이터시트 검색

IRFZ46L 전자부품 데이터시트



IRFZ46L 전자부품 회로 및
기능 검색 결과



IRFZ46L  

International Rectifier
International Rectifier

IRFZ46L

Power MOSFET ( Transistor )

l Advanced Process Technology l Surface Mount (IRFZ46S) l Low-profile through-hole (IRFZ46L) l 175°C Operating Temperature l Fast Switching G Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve




관련 부품 IRFZ4 상세설명

IRFZ44ZLPbF  

  
Power MOSFET ( Transistor )

Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-



International Rectifier
International Rectifier

PDF



IRFZ48RS  

  
HEXFET Power MOSFET

PD - 94074 HEXFET® Power MOSFET l l l l l l IRFZ48RS IRFZ48RL VDSS = 60V Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ48 for Linear/Audio Applications D RDS(on) = 0.018Ω G S ID = 50*A Descr



International Rectifier
International Rectifier

PDF



IRFZ48NSPBF  

  
HEXFET Power MOSFET

l l l l l l l Description Advanced Process Technology Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G IRFZ48NSPbF IRFZ48NLPbF D PD - 95125 HEXFET® Power MOSFET VDSS = 55V RDS(on) = 0.014Ω ID = 64A S A



International Rectifier
International Rectifier

PDF



IRFZ44VZLPbF  

  
Power MOSFET ( Transistor )

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon



International Rectifier
International Rectifier

PDF



IRFZ44VSPbF  

  
HEXFET Power MOSFET

PD - 95561 l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free IRFZ44VSPbF IRFZ44VLPbF D HEXFET® Power MOSFET VDSS = 60V RDS(on) = 16.5mΩ G S ID =



International Rectifier
International Rectifier

PDF



IRFZ44  

  
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB



New Jersey Semiconductor
New Jersey Semiconductor

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