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Datasheet IRFZ44NS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | IRFZ44NS | N-channel enhancement mode TrenchMOS transistor Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a surface mounting plastic envelope using ’trench’ technology. The device features very low on-state res |
 NXP Semiconductors |
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| 2 | IRFZ44NS | (IRFZ44NL / IRFZ44NS) Power MOSFET PD - 94153
Advanced Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description
l l
IRFZ44NS IRFZ44NL
HEXFET® Power MOSFET
D
VDSS = 55V RDS(on) = 0.0175Ω
Advanced HEXFET® Power MOSFETs f |
 International Rectifier |
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| 1 | IRFZ44NSPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achiev |
International Rectifier |
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