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Datasheet IRFZ34N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRFZ34N | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ34N
FEATURES ·Advanced Process Technology ·Dynamic dv/dt Rating ·175°C Operating Temperature ·Fast Switching ·Fully Avalanche Rated
DESCRIPTION ·Designed for use in switch mode power supplies and general
p |
 Inchange Semiconductor |
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| 6 | IRFZ34N | Power MOSFET ( Transistor ) PD -9.1276C
IRFZ34N
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Ease of Paralleling Description
l l
D
VDSS = 55V
G S
RDS(on) = 0.040Ω ID = 29A
Fifth Generation HEXFETs from International Rec |
 International Rectifier |
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| 5 | IRFZ34NL | (IRFZ34NS/L) Power MOSFET PD - 9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
l l l l l l
Advanced Process Technology Surface Mount (IRFZ34NS) Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V RDS(on) = 0.040Ω
G
ID = 29A
S
Description
Fifth Generation HEXFET |
International Rectifier |
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| 4 | IRFZ34NLPBF | Power MOSFET ( Transistor ) l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free
G
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
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International Rectifier |
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