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Datasheet IRFZ24N Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | IRFZ24N | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFZ24N
FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.07Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust dev |
 Inchange Semiconductor |
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| 9 | IRFZ24N | N-channel enhancement mode TrenchMOS transistor
Philips Semiconductors
Product specification
N-channel enhancement mode TrenchMOSTM transistor
GENERAL DESCRIPTION
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state |
 NXP Semiconductors |
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| 8 | IRFZ24N | Power MOSFET ( Transistor )
PD - 91354A
IRFZ24N
HEXFET® Power MOSFET
l l l l l
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.07Ω ID = 17A
Description
Fifth Generation HEXFET ® power MOSFETs from Inte |
 International Rectifier |
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| 7 | IRFZ24NL | Power MOSFET ( Transistor ) IRFZ24NS/NL
Power MOSFET VDSS = 55V, RDS(on) = 0.07 mohm, ID = 17 A
D
N Channel
G
S Symbol
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Value Min Typ
Drain to Source Breakdown Voltage Drain to Source Leakage Current
V(BR)DSS VGS = |
 TRANSYS |
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| Número de pieza | Descripción | Fabricantes | |
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