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Datasheet IRFY9120 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 IRFY9120   P-Channel MOSFET

IRFY9120 Dimensions in mm (inches). 10.6 (0.42) 0.8 (0.03) 4.6 (0.18) 16.5 (0.65) 3.70 Dia. Nom P-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 1.5(0.53) 10.6 (0.42) 1 2 3 12.70 (0.50 min) VDSS = 100V ID = 5.3A RDS(ON) = 0.69Ω All Semelab hermetically
Seme LAB
Seme LAB		 datasheet IRFY9120 pdf

IRFY9 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFY9230

P-CHANNEL POWER MOSFET

IRFY9230 MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) – 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64
 Seme LAB
Seme LAB		 datasheet pdf - Seme LAB
IRFY9240CM

P-CHANNEL POWER MOSFET

Provisional Data Sheet No. PD 9.1295A HEXFET® POWER MOSFET -200 Volt, 0.51Ω HEXFET International Rectifier’s HEXFET technology is the key to its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistan
 International Rectifier
International Rectifier		 datasheet pdf - International Rectifier
IRFY9140M

POWER MOSFET THRU-HOLE

PD - 94197C POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRFY9140 IRFY9140M IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.20 Ω 0.20 Ω ID -15.8A -15.8A Eyelets Glass Glass HEXFET® MOSFET technology is the
 International Rectifier
International Rectifier		 datasheet pdf - International Rectifier


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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