Datasheet IRFY430CM Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFY430CM	POWER MOSFET N-CHANNEL Provisional Data Sheet No. PD 9.1291B HEXFET® POWER MOSFET IRFY430CM N-CHANNEL 500 Volt, 1.5Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance c	International Rectifier

IRFY43 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFY430C	N-Channel MOSFET IRFY430C Dimensions in mm (inches). 10.6 (0.42) 0.8 (0.03) 4.6 (0.18) 16.5 (0.65) 3.70 Dia. Nom N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 1.5(0.53) 10.6 (0.42) 1 2 3 12.70 (0.50 min) VDSS = 500V ID = 4.5A RDS(ON) = 1.5Ω All Se	Seme LAB
IRFY430M-T257	N-CHANNEL POWER MOSFET IRFY430M-T257 MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 16.38 (0.645) 16.89 (0.665) 13.38 (0.	Seme LAB
IRFY430M	N-Channel MOSFET IRFY430M IRFY430M MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.92 10.41 10.67 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 500V 3.7	Seme LAB

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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