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Provisional Data Sheet No. PD 9.1289B HEXFET® POWER MOSFET IRFY240CM N-CHANNEL 200 Volt, 0.18Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance
IRFY240C Dimensions in mm (inches). 10.6 (0.42) 0.8 (0.03) 4.6 (0.18) 16.5 (0.65) 3.70 Dia. Nom N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 1.5(0.53) 10.6 (0.42) 1 2 3 12.70 (0.50 min) VDSS = 200V ID = 16A RDS(ON) = 0.18Ω All Semelab hermetically s
IRFY240 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 10.41 10.67 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 1 2 3 12.70 19.05 200V 12A 0.19Ω 10.41 10.92 2.54 BSC
IRFY230 MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS
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