IRFWZ44A
Samsung
Power MOSFET ( Transistor )
)($785(6
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IRFWZ44
Power MOSFET ( Transistor )$GYDQFHG 3RZHU 026)(7
IRFWZ44
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.02
Fairchild Semiconductor
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