IRFW720B
Fairchild Semiconductor
400V N-Channel MOSFETIRFW720B / IRFI720B
November 2001
IRFW720B / IRFI720B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology h
IRFW720S
Power MOSFET ( Transistor )$GYDQFHG 3RZHU 026)(7
IRFW720S
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 1.408Ω (Typ.)
Absolute Maximum R
Fairchild Semiconductor
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IRFW720A
Power MOSFET ( Transistor )
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Samsung
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