Datasheet IRFW710B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFW710B	400V N-Channel MOSFET IRFW710B / IRFI710B November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize	Fairchild Semiconductor

IRFW7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFW740A	Advanced Power MOSFET $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.437	Fairchild Semiconductor
IRFW740S	Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7 IRFW740S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Lower RDS(ON): 0.437Ω (Typ.)	Fairchild Semiconductor
IRFW740B	400V N-Channel MOSFET IRFW740B / IRFI740B November 2001 IRFW740B / IRFI740B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially t	Fairchild Semiconductor

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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