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Datasheet IRFW634A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | IRFW634A | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFW/I634A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.327Ω(Typ.)
Absolute Maximum |
Fairchild Semiconductor |
IRFW6 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
IRFW644B | N-Channel MOSFET |
Fairchild Semiconductor |
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IRFW630A | Power MOSFET ( Transistor ) |
Samsung |
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IRFW620B | N-Channel MOSFET |
Fairchild Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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