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IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th
IRFR320, IRFU320 Data Sheet July 1999 File Number 2412.3 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th
www.vishay.com IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 20 3.3 11 Single 1.8 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dynamic
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