|
IRFR224B / IRFU224B November 2001 IRFR224B / IRFU224B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o
www.vishay.com IRFR224, IRFU224, SiHFR224, SiHFU224 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 14 2.7 7.8 Single D DPAK (TO-252) D IPAK (TO-251) D G 1.1 GS GD S S N-Channel MOSFET FEATURES • Dynami
PD - 95069A IRFR220PbF IRFU220PbF • Lead-Free www.irf.com 1 12/14/04 IRFR/U220PbF 2 www.irf.com IRFR/U220PbF www.irf.com 3 IRFR/U220PbF 4 www.irf.com IRFR/U220PbF www.irf.com 5 IRFR/U220PbF 6 www.irf.com IRFR/U220PbF www.irf.com 7 IRFR/U220PbF Peak Diod
PD- 95063A SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET VDSS RDS(on) max (mΩ) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
IRFR220B / IRFU220B November 2001 IRFR220B / IRFU220B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |