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Datasheet IRFU120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRFU120 | (IRFR120 / IRFU120) HEXFET POWER MOSFET |
 International Rectifier |
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| 10 | IRFU120 | (IRFR120 / IRFU120) N-Channel Power MOSFETs IRFR120, IRFU120
Data Sheet July 1999 File Number
2414.2
8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th |
 Intersil Corporation |
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| 9 | IRFU120 | Power MOSFET ( Transistor ) www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ()
100 VGS = 10 V
Qg (Max.) (nC)
16
Qgs (nC) Qgd (nC)
4.4 7.7
Configuration
Single
0.27
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
S G
GD S
S N-Channel MOSFET
FEATURES � |
 Vishay Siliconix |
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| 8 | IRFU1205 | (IRFR1205 / IRFU1205) Power MOSFET PD - 91318B
IRFR/U1205
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Surface Mount (IRFR1205) Straight Lead (IRFU1205) Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.027Ω ID = 44A
Description
Fifth Generation HEXFETs from International Rectifier utilize advance |
International Rectifier |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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