IRFU110A
Samsung
Power MOSFET ( Transistor )
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IRFU110
N-Channel Power MOSFETsData Sheet
IRFR110, IRFU110
January 2002
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These a
Fairchild Semiconductor
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IRFU110
(IRFR110 / IRFU110) N-Channel Power MOSFETsIRFR110, IRFU110
Data Sheet July 1999 File Number
3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of ope
Intersil Corporation
PDF
IRFU110
Power MOSFET ( Transistor )Power MOSFET
IRFU110, SiHFU110
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 10 V
8.3 2.3 3.8 Single
0.54
IPAK (TO-251)
D
D
G
GD S
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free
S N-Channel MOSFE
Vishay Siliconix
PDF