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Datasheet IRFU110 Equivalent ( PDF )

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4 IRFU110   (IRFR110 / IRFU110) N-Channel Power MOSFETs

IRFR110, IRFU110 Data Sheet July 1999 File Number 3275.3 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of ope
Intersil Corporation
Intersil Corporation
datasheet IRFU110 pdf
3 IRFU110   Power MOSFET ( Transistor )

Power MOSFET IRFU110, SiHFU110 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V 8.3 2.3 3.8 Single 0.54 IPAK (TO-251) D D G GD S ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free S N-Channel MOSFE
Vishay Siliconix
Vishay Siliconix
datasheet IRFU110 pdf
2 IRFU110   N-Channel Power MOSFETs

Data Sheet IRFR110, IRFU110 January 2002 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These a
Fairchild Semiconductor
Fairchild Semiconductor
datasheet IRFU110 pdf
1 IRFU110A   Power MOSFET ( Transistor )

     )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýý*DWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýý*DWHýý&KDUJH Qýýý([WHQGHGýý6DIHýý2SHUDWLQJýý$UHD Qýýý/RZHUýý/HDNDJHýý&XUUHQWýýãýýìíýý
Samsung
Samsung
datasheet IRFU110A pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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