IRFSL11N50A
IRF
HEXFET Power MOSFETPD- 91847A
IRFSL11N50A
HEXFET® Power MOSFET
l l l l l
Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements
D
VDSS = 500V
G S
RDS(on) = 0.55Ω ID = 11A
Description
Third Generation HEXFETs from Inte
IRFSL11N50A
Vishay
Power MOSFET ( Transistor )IRFSL11N50A, SiHFSL11N50A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC)
500 VGS = 10 V
51
Qgs (nC)
12
Qgd (nC)
23
Configuration
Single
I2PAK (TO-262)
D
0.55
G
S D G
S
N-Channel MOSFET
ORDERING INFORMATION
P
IRFSL11N50APBF
International Rectifier
HEXFET Power MOSFETPD- 95231
IRFSL11N50APbF
•
Lead-Free
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04/29/04
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IRFSL11N50A