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IRFS650B November 2001 IRFS650B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS650A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power suppli
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 IRFS650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 15.8
IRF654B/IRFS654B November 2001 IRF654B/IRFS654B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-stat
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