IRFS644B 전자부품 데이터시트

Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s Lower Leakage Current : 10 μA (Max.) @ VDS = 250V s Lower RDS(ON) : 0.214 Ω (Typ.) IRFS644A BVDSS = 25

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IRFS640 Rev.D Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220F Plastic Package. 特征 / Features 低栅电荷,低反馈电容,开关速度快。 Low gate charge, low crss, fast switching. 用途 / Applications 用于高�

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS644A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Lower Leakage Current : 10 A (Max.) @ VDS = 250V DESCRIP

IRF640B/IRFS640B November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-stat

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