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IRFS520A 전자부품 데이터시트



IRFS520A 전자부품 회로 및
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IRFS520A  

Fairchild
Fairchild

IRFS520A

Advanced Power MOSFET

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.




관련 부품 IRFS52 상세설명

IRFS52N15DPBF  

  
Power MOSFET ( Transistor )

PROVISIONAL SMPS MOSFET PD - 97002 IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF HEXFET® Power MOSFET Applications Key Parameters l High frequency DC-DC converters l Plasma Display Panel l Lead-Free VDS VDS (Avalanche) min. RDS(ON) max @ 10V 150 200 32 V V m: Benefits TJ max l Low Gate-to-Dr



International Rectifier
International Rectifier

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IRFS52N15D  

  
Power MOSFET ( Transistor )

PD - 94357A SMPS MOSFET IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS 150V RDS(on) max 0.032Ω ID 60A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Sim



IRF
IRF

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