IRFS520A
Fairchild
Advanced Power MOSFETAdvanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Lower RDS(ON) : 0.
IRFS52N15DPBF
Power MOSFET ( Transistor )PROVISIONAL
SMPS MOSFET
PD - 97002
IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF
HEXFET® Power MOSFET
Applications
Key Parameters
l High frequency DC-DC converters l Plasma Display Panel l Lead-Free
VDS VDS (Avalanche) min. RDS(ON) max @ 10V
150 200 32
V
V
m:
Benefits
TJ max
l Low Gate-to-Dr
International Rectifier
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IRFS52N15D
Power MOSFET ( Transistor )PD - 94357A
SMPS MOSFET
IRFB52N15D IRFS52N15D IRFSL52N15D
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters
VDSS
150V
RDS(on) max
0.032Ω
ID
60A
Benefits l Low Gate-to-Drain Charge to Reduce
Switching Losses l Fully Characterized Capacitance Including
Effective COSS to Sim
IRF
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