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IRFS440B 전자부품 데이터시트



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IRFS440B  

Fairchild
Fairchild

IRFS440B

500V N-Channel MOSFET

IRFS440B November 2001 IRFS440B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tail




관련 부품 IRFS44 상세설명

IRFS4410PbF  

  
HEXFET Power MOSFET

PD - 95707E IRFB4410PbF IRFS4410PbF IRFSL4410PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G S HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dV/



International Rectifier
International Rectifier

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IRFS440A  

  
Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.) Absolute Maximum Ratings Sym



Fairchild Semiconductor
Fairchild Semiconductor

PDF



IRFS4410ZPbF  

  
HEXFET Power MOSFET

IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Cap



International Rectifier
International Rectifier

PDF



IRFS4410  

  
HEXFET Power MOSFET

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced bod



International Rectifier
International Rectifier

PDF



IRFS440A  

  
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS440A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power suppli



Inchange Semiconductor
Inchange Semiconductor

PDF



IRFS440  

  
Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(ON): 0.638Ω (Typ.) Absolute Maximum Ratings Sym



Fairchild Semiconductor
Fairchild Semiconductor

PDF




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