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Datasheet IRFS350 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | IRFS350 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Ratings
Symbo |
 Fairchild Semiconductor |
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| 5 | IRFS3507 | Power MOSFET ( Transistor ) PD - 96903A
IRFB3507 IRFS3507 IRFSL3507
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Cap |
 IRF |
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| 4 | IRFS3507 | (IRFx3507) HEXFET Power MOSFET
PD - 96903A
IRFB3507 IRFS3507 IRFSL3507
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fu |
 International Rectifier |
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| 3 | IRFS350A | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS350A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power suppli |
 Inchange Semiconductor |
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