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Datasheet IRFS340B Equivalent ( PDF )

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1 IRFS340B   400V N-Channel MOSFET

IRFS340B November 2001 IRFS340B 400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, pr
Fairchild
Fairchild
datasheet IRFS340B pdf

IRFS3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
IRFS350

Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.) Absolute Ma
Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf - Fairchild Semiconductor
IRFS3607PBF

Power MOSFET ( Transistor )

PD - 97308C Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607PbF IRFS3607PbF IRFSL3607PbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanc
International Rectifier
International Rectifier
datasheet pdf - International Rectifier
IRFS3306PBF

Power MOSFET ( Transistor )

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and A
International Rectifier
International Rectifier
datasheet pdf - International Rectifier


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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