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Datasheet IRFR9120 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
6 | IRFR9120 | Power MOSFET ( Transistor ) |
IRF |
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5 | IRFR9120 | P Channel Power MOSFET IRFR9120, IRFU9120
Data Sheet July 1999 File Number
3987.4
5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs
These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode sili |
Intersil |
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4 | IRFR9120 | Power MOSFET ( Transistor ) IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS = - 10 V
18 3.0 9.0 Single
0.60
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel MOSFET
FEATURES
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Vishay Siliconix |
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3 | IRFR9120N | Power MOSFET ( Transistor ) PD - 9.1507A
PRELIMINARY
l l l l l l l
IRFR/U9120N
HEXFET® Power MOSFET
D
Ultra Low On-Resistance P-Channel Surface Mount (IRFR9120N) Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated
VDSS = -100V RDS(on) = 0.48Ω
G S
ID = -6.6A
Description
Fifth Gen |
International Rectifier |
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Número de pieza | Descripción | Fabricantes | |
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