IRFR410
Intersil Corporation
N-Channel Power MOSFETs
IRFR410, IRFU410
Data Sheet July 1999 File Number
3372.2
1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, a
IRFR4104
International Rectifier
Power MOSFET ( Transistor )
PD - 94728
AUTOMOTIVE MOSFET
IRFR4104 IRFU4104
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjma
IRFR4104PbF
International Rectifier
Power MOSFET ( Transistor )PD - 95425B
IRFR4104PbF IRFU4104PbF
HEXFET® Power MOSFET
Features
l l l l l l
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
D
VDSS = 40V RDS(on) = 5.5m�
IRFR4105
International Rectifier
Power MOSFET ( Transistor )
PD - 91302C
IRFR/U4105
HEXFET® Power MOSFET
l l l l l
Ultra Low On-Resistance Surface Mount (IRFR4105) Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated
D
VDSS = 55V
G S
RDS(on) = 0.045Ω ID = 27A
Description
Fifth Ge
IRFR4105PBF
International Rectifier
HEXFET Power MOSFETPD - 95550A
IRFR4105PbF IRFU4105PbF
Ultra Low On-Resistance l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
D
VDSS = 55V
G S
RDS(on) = 0.045Ω ID = 27A
Fifth
IRFR4105PbF
International Rectifier
Power MOSFET ( Transistor )PD - 95550A
IRFR4105PbF IRFU4105PbF
Ultra Low On-Resistance l Surface Mount (IRFR4105) l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
D
VDSS = 55V
G S
RDS(on) = 0.045Ω ID = 27A
Fifth
IRFR4105Z
International Rectifier
Power MOSFET ( Transistor )PD - 94752
AUTOMOTIVE MOSFET
IRFR4105Z IRFU4105Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S
IRFR4105Z
International Rectifier
Power MOSFET ( Transistor )PD - 94752
AUTOMOTIVE MOSFET
IRFR4105Z IRFU4105Z
HEXFET® Power MOSFET
D
Features
● ● ● ● ●
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 55V
G S