IRFR310A
Fairchild Semiconductor
(IRFR310A / IRFU310A) Advanced Power MOSFET
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦
IRFR310
Power MOSFET ( Transistor )$GYDQFHG 3RZHU 026)(7
IRFR310
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.)
BVDSS = 400 V RDS(on)
Fairchild Semiconductor
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IRFR310B
400V N-Channel MOSFETIRFR310B / IRFU310B
November 2001
IRFR310B / IRFU310B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o
Fairchild Semiconductor
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IRFR310
Power MOSFET ( Transistor )www.vishay.com
IRFR310, IRFU310, SiHFR310, SiHFU310
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
12 1.9 6.5 Single
3.6
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
S N-Channel MOSFET
FEATURES
• Dynami
Vishay Siliconix
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