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Datasheet IRFR214 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRFR214 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFR214
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 1.393Ω (Typ.)
BVDSS = 250 V RDS(o |
 Fairchild Semiconductor |
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| 6 | IRFR214 | N-Channel Power MOSFETs IRFR214, IRFU214
Data Sheet July 1999 File Number
3274.2
2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of ope |
 Intersil Corporation |
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| 5 | IRFR214 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 4 | IRFR214 | Power MOSFET ( Transistor ) www.vishay.com
IRFR214, IRFU214, SiHFR214, SiHFU214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250 VGS = 10 V
8.2 1.8 4.5 Single
2.0
D
FEATURES
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (I |
 Vishay Siliconix |
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