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Datasheet IRFR014 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | IRFR014 | Power MOSFET ( Transistor ) www.vishay.com
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
DPAK (TO-252)
D
IPAK (TO-251)
D
GS
GD S
D
G S
N-Channel MOSFET
FEATURES • Dynamic |
 Vishay |
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| 6 | IRFR014 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFR014
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.097Ω (Typ.)
BVDSS = 60 V RDS(on) |
 Fairchild Semiconductor |
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| 5 | IRFR014 | Power MOSFET ( Transistor ) |
 IRF |
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| 4 | IRFR014 | (IRFR014 / IRFR010) N-CHANNEL POWER MOSFET |
 Samsung semiconductor |
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