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IRFP460C  

Fairchild Semiconductor
Fairchild Semiconductor

IRFP460C

500V N-Channel MOSFET

IRFP460C February 2002 IRFP460C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especial




관련 부품 IRFP46 상세설명

IRFP460NPBF  

  
HEXFET Power MOSFET

SMPS MOSFET PD-94809 IRFP460NPbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dy



International Rectifier
International Rectifier

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IRFP460LCPBF  

  
HEXFET Power MOSFET

PD - 94902 IRFP460LCPbF • Lead-Free www.irf.com 1 12/19/03 IRFP460LCPbF 2 www.irf.com IRFP460LCPbF www.irf.com 3 IRFP460LCPbF 4 www.irf.com IRFP460LCPbF www.irf.com 5 IRFP460LCPbF 6 www.irf.com IRFP460LCPbF www.irf.com 7 IRFP460LCPbF TO-247AC Package Outline Dimensions are



International Rectifier
International Rectifier

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IRFP460AS  

  
Power MOSFET ( Transistor )

PD-94011A SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder plated and leadformed for surfac



International Rectifier
International Rectifier

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IRFP460PBF  

  
N-Channel Type Power MOSFET

IRFP460PBF ® IRFP460PBF Pb Free Plating Product Pb 20A,500V Heatsink N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.24 Ω )@VGS=10V ■ Gate Charge (Typical 130nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain ● ◀▲ ● ● {



Thinki Semiconductor
Thinki Semiconductor

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IRFP462  

  
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP462 FEATURES ·Drain Current –ID= 17A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo



Inchange Semiconductor
Inchange Semiconductor

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IRFP460PBF  

  
Power MOSFET ( Transistor )

• Lead-Free PD - 94901 IRFP460PbF Document Number: 91237 12/19/03 www.vishay.com 1 IRFP460PbF Document Number: 91237 www.vishay.com 2 IRFP460PbF Document Number: 91237 www.vishay.com 3 IRFP460PbF Document Number: 91237 www.vishay.com 4 IRFP460PbF Document Number: 91237 www.vishay.co



International Rectifier
International Rectifier

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