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IRFP460  

Fairchild Semiconductor
Fairchild Semiconductor

IRFP460

20A, 500V, Power MOSFET

$GYDQFHG 3RZHU 026)(7 IRFP460 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(O



IRFP460  

International Rectifier
International Rectifier

IRFP460

20A, 500V, Power MOSFET




IRFP460  

Intersil Corporation
Intersil Corporation

IRFP460

500V, 20A, N-Channel Power MOSFET

IRFP460 Data Sheet July 1999 File Number 2291.3 20A, 500V, 0.270 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified lev



IRFP460  

Vishay Siliconix
Vishay Siliconix

IRFP460

500V, 20A, Power MOSFET

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 29 110 Single D FEATURES 500 0.27 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central



IRFP460  

NXP Semiconductors
NXP Semiconductors

IRFP460

500V, 20A, PowerMOS transistors Avalanche energy rated

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance IRFP460



IRFP460  

Inchange Semiconductor
Inchange Semiconductor

IRFP460

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP460 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.27Ω(Max) ·Fast Switching DES



IRFP460  

ST Microelectronics
ST Microelectronics

IRFP460

N-Channel Power MOSFET / Transistor

® IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH™ MOSFET TYPE IRFP460 s s s s s V DSS 500 V R DS(on) < 0.27 Ω ID 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GAT



IRFP460A  

International Rectifier
International Rectifier

IRFP460A

Power MOSFET ( Transistor )

PD- 91880 SMPS MOSFET IRFP460A HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l VDSS 500V Rds(on) max 0.27Ω ID 20A Benefits Low Gate Charge Qg results in Simple Drive Re



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