IRFP460
Fairchild Semiconductor
20A, 500V, Power MOSFET$GYDQFHG 3RZHU 026)(7
IRFP460
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(O
IRFP460
Intersil Corporation
500V, 20A, N-Channel Power MOSFETIRFP460
Data Sheet July 1999 File Number
2291.3
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified lev
IRFP460
Vishay Siliconix
500V, 20A, Power MOSFETIRFP460, SiHFP460
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 29 110 Single
D
FEATURES
500 0.27
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central
IRFP460
NXP Semiconductors
500V, 20A, PowerMOS transistors Avalanche energy ratedPhilips Semiconductors
Product specification
PowerMOS transistors Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance
IRFP460
IRFP460
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP460
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.27Ω(Max) ·Fast Switching
DES
IRFP460
ST Microelectronics
N-Channel Power MOSFET / Transistor®
IRFP460
N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH™ MOSFET
TYPE IRFP460
s s s s s
V DSS 500 V
R DS(on) < 0.27 Ω
ID 20 A
TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GAT
IRFP460A
International Rectifier
Power MOSFET ( Transistor )PD- 91880
SMPS MOSFET
IRFP460A
HEXFET® Power MOSFET
Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching
l
VDSS
500V
Rds(on) max
0.27Ω
ID
20A
Benefits Low Gate Charge Qg results in Simple Drive Re