IRFP440
Intersil Corporation
N-Channel Power MOSFET / TransistorIRFP440
Data Sheet July 1999 File Number
2089.3
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified le
IRFP440
Fairchild Semiconductor
Power MOSFET ( Transistor )$GYDQFHG 3RZHU 026)(7
IRFP440
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V ♦ Lower RDS(O
IRFP440
Vishay Siliconix
Power MOSFET ( Transistor )IRFP440, SiHFP440
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 63 11 30 Single
D
FEATURES
500 0.85
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central M
IRFP440A
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP440A
FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.85Ω(Max) ·Fast Switching
D
IRFP440A
Samsung
Power MOSFET ( Transistor )
)($785(6
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IRFP440B
Fairchild Semiconductor
500V N-Channel MOSFETIRFP440B
November 2001
IRFP440B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tail