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Datasheet IRFP350 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | IRFP350 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP350
FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 400V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.3Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mod |
 Inchange Semiconductor |
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| 10 | IRFP350 | Power MOSFET ( Transistor ) $GYDQFHG 3RZHU 026)(7
IRFP350
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 0.254Ω (Typ.)
Absolute Maximum Rati |
 Fairchild Semiconductor |
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| 9 | IRFP350 | (IRFP350 - IRFP353) N-CHANNEL POWER MOSFETS |
 Samsung semiconductor |
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| 8 | IRFP350 | Power MOSFET ( Transistor )
DataSheet 4 U .com
www.DataSheet4U 4U.com
DataSheet 4 U .com
www.DataSheet4U 4U.com
DataSheet 4 U .com
www.DataSheet4U www.DataSh |
 International Rectifier |
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