IRFP264
International Rectifier
Power MOSFET ( Transistor )
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IRFP264
Vishay
Power MOSFET ( Transistor )IRFP264, SiHFP264
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single
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FEATURES
250 0.075
• • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rated
IRFP264
IXYS Corporation
Standard Power MOSFET - N-Channel Enhancement Mode
Standard Power MOSFET
IRFP 264
VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to
IRFP264N
International Rectifier
Power MOSFET ( Transistor )
PD - 94214
IRFP264N
HEXFET® Power MOSFET
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Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements
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VDSS = 250V RDS(
IRFP264NPBF
International Rectifier
HEXFET Power MOSFETPD - 94811
IRFP264NPbF
HEXFET® Power MOSFET
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description
Fifth Generation HEXFETs from I