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IRFP264 전자부품 데이터시트



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IRFP264  

International Rectifier
International Rectifier

IRFP264

Power MOSFET ( Transistor )

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IRFP264  

Vishay
Vishay

IRFP264

Power MOSFET ( Transistor )

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single D FEATURES 250 0.075 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated



IRFP264  

IXYS Corporation
IXYS Corporation

IRFP264

Standard Power MOSFET - N-Channel Enhancement Mode

Standard Power MOSFET IRFP 264 VDSS = 250 V ID (cont) = 38 A RDS(on) = 0.075 Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to



IRFP264N  

International Rectifier
International Rectifier

IRFP264N

Power MOSFET ( Transistor )

PD - 94214 IRFP264N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(



IRFP264NPBF  

International Rectifier
International Rectifier

IRFP264NPBF

HEXFET Power MOSFET

PD - 94811 IRFP264NPbF HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fifth Generation HEXFETs from I



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