IRFP257
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP257
FEATURES ·Drain Current –ID= 21A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 275V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.17Ω(Max) ·Fast Switching
DES
IRFP253
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP253
FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 150V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.12Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mo
Inchange Semiconductor
PDF
IRFP244
Power MOSFET ( Transistor )$GYDQFHG 3RZHU 026)(7
IRFP244
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.)
Absolute Maximum Ra
Fairchild Semiconductor
PDF
IRFP252
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP252
FEATURES ·Drain Current –ID= 27A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.12Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mo
Inchange Semiconductor
PDF