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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP247 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP245 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.34Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP244A FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch m
$GYDQFHG 3RZHU 026)(7 IRFP244 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) Absolute Maximum Ra
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP246 FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo
Power MOSFET IRFP244, SiHFP244 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 63 12 39 Single 0.28 TO-247 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating
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