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IRFP244B  

Fairchild Semiconductor
Fairchild Semiconductor

IRFP244B

250V N-Channel MOSFET

IRFP244B November 2001 IRFP244B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tail




관련 부품 IRFP24 상세설명

IRFP247  

  
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP247 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo



Inchange Semiconductor
Inchange Semiconductor

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IRFP245  

  
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP245 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.34Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo



Inchange Semiconductor
Inchange Semiconductor

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IRFP244A  

  
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP244A FEATURES ·Drain Current –ID= 16A@ TC=25℃ ·Drain Source Voltage- : VDSS= 250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch m



Inchange Semiconductor
Inchange Semiconductor

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IRFP244  

  
Power MOSFET ( Transistor )

$GYDQFHG 3RZHU 026)(7 IRFP244 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V ♦ Lower RDS(ON): 0.214Ω (Typ.) Absolute Maximum Ra



Fairchild Semiconductor
Fairchild Semiconductor

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IRFP246  

  
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP246 FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 275V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.28Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mo



Inchange Semiconductor
Inchange Semiconductor

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IRFP244  

  
Power MOSFET ( Transistor )

Power MOSFET IRFP244, SiHFP244 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 63 12 39 Single 0.28 TO-247 D G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating



Vishay
Vishay

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