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Datasheet IRFP240 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | IRFP240 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFP240
FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.18Ω(Max) ·Fast Switching
DESCRIPTION ·Designed for use in switch mo |
 Inchange Semiconductor |
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| 9 | IRFP240 | Power MOSFET ( Transistor ) |
 International Rectifier |
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| 8 | IRFP240 | N-Channel Power MOSFET / Transistor IRFP240
Data Sheet July 1999 File Number
2087.4
20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche |
 Intersil Corporation |
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| 7 | IRFP240 | Power MOSFET ( Transistor ) IRFP240, SiHFP240
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single
D
FEATURES
200 0.18
• • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mou |
 Vishay Siliconix |
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