Datasheet IRFNG50 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	IRFNG50	POWER MOSFET N-CHANNEL Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1556 HEXFET® POWER MOSFET 1000 Volt, 2.0Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate	International Rectifier

IRFN Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
IRFN150	Power MOSFET ( Transistor ) PD - 91547C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) IRFN150 0.07 Ω ID 34A IRFN150 JANTX2N7224U JANTXV2N7224U REF:MIL-PRF-19500/592 100V, N-CHANNEL HEXFET® MOSFETTECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier�	International Rectifier
IRFN214B	250V N-Channel MOSFET IRFN214B IRFN214B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimi	Fairchild Semiconductor
IRFN3710	TRANSISTOR N-CHANNEL Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1417 REPETITIVE AVALANCHE AND dv/dt RATED IRFN3710 N-CHANNEL HEXFET® TRANSISTOR 100 Volt, 0.028Ω , HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced proce	International Rectifier

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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